Numerical investigation of transient capacitances of Ge/Si heteronanocrystal memories in retention mode
نویسندگان
چکیده
Transient capacitances were numerically investigated for Ge/Si heteronanocrystal memories. Flatband voltage shifts Vfb were obtained. The results suggest that the Ge/Si heteronanocrystal memories have significantly longer data retention compared with the memories embedding Si nanocrystals only. It is also found that larger heteronanocrystal leads to longer retention, larger device capacitance, and smaller Vfb. © 2007 American Institute of Physics. DOI: 10.1063/1.2434947
منابع مشابه
Transient processes in a Ge/Si hetero-nanocrystal p-channel memory
Transient processes of Ge/Si hetero-nanocrystal floating gate memories are simulated numerically. Compared with Si nanocrystal memories, Ge/Si hetero-nanocrystal memories show similar writing and erasing efficiency with a weaker writing saturation and markedly improved retention characteristics. 2006 Elsevier Ltd. All rights reserved. PACS: 72.20.Jv; 73.21.La; 73.90.+f; 74.50.+r
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